t4 - lds -0 32 2, rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 1 of 5 1n70 47 cc t3 available on commercial versions s ilicon d ual s chottky p ower r ectifier 16 a mp , 1 50 v olt qualified per mil -prf- 19500/73 7 qualified levels: jan, jantx, and jantxv description th is dual schottky r ectifier device is military qualified up to a jan txv level for high - reliability applications. they are hermetically sealed in a common cathode configuration offering very fast switching characteristics compared to fast or ultrafast recti fiers. to - 25 7aa package also available in : to - 25 4 aa package ( leaded ) 1n70 39 cct 1 u1 (smd - 1) package ( surface mount ) 1n7039 ccu 1 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered equivalent of 1n7047 ? hermeti cally isolated to - 25 7 aa package ? internal metallurgical bonds ? temperature independent switching behavior ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/73 7 ? rohs compliant versions available (commercial grade only) applications / benefits ? schottky barrier rectifier diodes (dual) for military, space and other high reliability appl ications. ? switching power supplies or other applications requiring extremely fast switching and esse ntially no switching losses. ? low f orward v oltage d rop ? high forward surge capability ? inherently radiation hard >100 krads as described in micronote 050 m axim um ratings @ t a = +25 o c unless otherwise noted. msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction an d storage temp erature t j and t stg - 65 to + 150 o c thermal resistance junction - to - case (2.3 o c/w maximum) r ? jc 1.85 o c /w working peak reverse voltage v rw m 150 v junction capacitance c j 350 pf average dc output current @ t c = + 100 o c i o 16 a non - repetitive sinusoidal surge current @ t p = 8.3 ms , t c = +25 o c i fsm 120 a downloaded from: http:///
t4 - lds -0 32 2, rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 2 of 5 1n70 47 cc t3 mechanical and packaging ? ca se: nickel p lated c opper b ase & 1020 s teel f rame ? terminals: solder d ipped c opper c ored 52 a lloy plating ? marking: alpha n umeric ? polarity: see s chematic on last page ? weight: approximately 3.43 grams ? see p ackage d imensions on last page. part nomenclature jan 1n7047 cc t3 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number rohs compliance e3 = rohs compl iant ( available on commercial grade only ) blank = non - rohs compliant to - 25 7aa package type p olarity (common cathode) symbols & definitions symbol definition c j junction capacitance: the junction capacitance in pf at a specified frequency (typically 1mhz) and specified voltage. i f forward current: the current flowing from the p - type region to the n - type region. i r reverse current: the dc current flowing from the external circuit into the cathode terminal at the specified voltage v r . t j juncti on temperature: the temperature of a semiconductor junction. v f forward voltage: a positive dc anode - cathode voltage the device will exhibit at a specified forward current. v r reverse voltage: a positive dc cathode - anode voltage below the breakdown r egion. downloaded from: http:///
t4 - lds -0 32 2, rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 3 of 5 1n70 47 cc t3 electrical characteristics @ t a = + 25 o c unless otherwise noted parameters / test conditions symbol min. max. unit off charactertics forward voltage* i f = 8 a i f = 16 a i f = 8 a, t c = - 55 c i f = 16 a, t c = +1 25 c v f 0.91 1.13 1. 02 0.94 v reverse current v r = 1 50 v v r = 1 50 v, t c = +125 c i r 0.5 15 ma * pulse test: pulse width 300 sec, d uty cycle 2% . downloaded from: http:///
t4 - lds -0 32 2, rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 4 of 5 1n70 47 cc t3 graphs t c (c) (case) figure 1 temperature - current derating t1, rectangular pulse duration ( s ec) figure 2 thermal impedance (for each leg) thermal impedance Cz ? jx ( o c/w) switch mode operation maximum io rating (a) downloaded from: http:///
t4 - lds -0 32 2, rev . 1 ( 10/23/13 ) ?201 3 microsemi corporation page 5 of 5 1n70 47 cc t3 package dimensions note s: 1. dimensions are in inches. 2. millimeter equivalents are given for information only. 3 . g lass meniscus included in dimension tl and bl. schematic term 1 = anode term 2 = cathode term 3 = anode dimensions ltr inch millimeters min max min max bl 0.410 0.430 10.41 10.92 ch 0.190 0.200 4.83 5.08 ld 0.025 0.0 40 0.64 1.02 ll 0.50 0 0.750 12.70 19.05 lo 0.120 bsc 3.05 bsc ls 0.100 bsc 2.54 bsc mhd 0.140 0.150 3.56 3.81 mho 0.527 0.537 13.39 13.64 tl 0.645 0.665 16.38 16.89 tt 0.035 0.045 0.89 1.14 tw 0.410 0.420 10.41 10.67 downloaded from: http:///
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